single igbtmod? a-series module 600 amperes/1200 volts cm600ha-24a 1 01/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transis - tor in a single configuration with a reverse connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: dc chopper inverter ups forklift ordering information: example: select the complete part module number you desire from the table below -i.e. cm600ha-24a is a 1200v (v ces ), 600 ampere single igbtmod? power module. type current rating v ces amperes volts (x 50) cm 600 24 outline drawing and circuit diagram dimensions inches millimeters a 4.25 108.0 b 3.66 0.01 93.0 0.25 c 0.63 16.0 d 0.30 7.5 e 0.69 17.5 f 1.14 29.0 g 0.79 20.0 h 0.94 24.0 j 0.55 13.9 k 0.24 6.0 l 2.44 62.0 m 1.89 0.01 48.0 0.25 n 0.39 10.0 p 0.39 20.0 q 0.51 23.0 r 0.33 8.5 s 1.42+0.04/-0.02 36.0+1/-0.5 dimensions inches millimeters t 1.02+0.04/-0.02 25.8+1/-0.5 u m6 metric m6 v m4 metric m4 w 0.256 dia. 6.5 dia. x 0.79 20.0 y 0.35 9.0 z 0.43 11.0 aa 0.53 13.55 ab 0.27 7.0 ac 0.98 25.0 ad 1.38 35.0 ae 0.45 11.5 af 0.2 5.0 ag 0.25 6.5 ah 0.12 3.2 aj 0.32 8.2 c g e e a b f k j e d r af ah ae ag af aj s ad u - thd. v -thd. (2 typ.) w - dia. (4 typ.) y y x z h g c c aa k d m n ab p q (2 typ.) l e e g c t ac
cm600ha-24a single igbtmod? a-series module 600 amperes/1200 volts 2 01/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol cm600ha-24a units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (dc, t c = 87c)* 4 i c 600 amperes peak collector current (pulse, repetitive)* 2 i cm 1200 amperes maximum collector dissipation (t c = 25c)* 2, * 4 p c 3670 watts emitter current (t c = 25c) i e * 1 600 amperes peak emitter current (pulse, repetitive)* 2 i em * 1 1200 amperes mounting torque, m6 main terminal 26 in-lb mounting torque, m6 mounting 26 in-lb mounting torque, m4 g(e) terminal 13 in-lb weight 480 grams isolation voltage (main terminal to baseplate, f = 60hz, ac 1 min.) v iso 2500 volts electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 1.5 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 6.0 7.0 8.0 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c* 3 2.1 3.0 volts i c = 600a, v ge = 15v, t j = 125c* 3 2.4 volts forward transfer admittance | fs | i c = 600a, v ce = 10v* 3 120 s input capacitance c ies 105 nf output capacitance c oes v ce = 10v, v ge = 0v 9 nf reverse transfer capacitance c res 2.0 nf total gate charge q g v cc = 600v, i c = 600a, v ge = 15v 3000 nc inductive turn-on delay time t d(on) 660 ns load rise time t r v cc = 600v, i c = 600a, 190 ns switch turn-off delay time t d(off) v ge = 15v, r g = 0.52 , 700 ns time fall time t f inductive load 350 ns diode reverse recovery time t rr * 1 i e = 600a 250 ns diode reverse recovery charge q rr * 1 19.0 c emitter-collector voltage v ec * 1 i e = 600a, v ge = 0v* 3 3.8 volts external gate resistance r g 0.52 7.8 *1 represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *2 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *3 pulse width and repetition rate should be such as to cause negligible temperature rise. *4 case temperature (t c ), and heatsink temperature (t f ) measured point is just under the chips.
cm600ha-24a single igbtmod? a-series module 600 amperes/1200 volts 3 01/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 -1 10 1 01 34 25 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 68 10 14 12 16 18 20 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 4 3 0 300 900 2 1 0 1200 v ge = 15v t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 1200a i c = 600a i c = 240a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 02 46 81 0 300 0 v ge = 20v 10 11 12 15 13 9 t j = 25 c 600 900 1200 600 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0.52? t j = 125c inductive load t f 10 3 t j = 25c t j = 125c thermal and mechanical characteristics, t j = 25c unless otherwise speci ed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt* 4 ? ? 0.034 c/w thermal resistance, junction to case r th(j-c) d per fwdi* 4 ? ? 0.051 c/w contact thermal resistance r th(c-f) case to heatsink, ? 0.02 ? c/w thermal grease applied* 4, * 5 *4 case temperature (t c ), and heatsink temperature (t f ) measured point is just under the chips. *5 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)].
cm600ha-24a single igbtmod? a-series module 600 amperes/1200 volts 4 01/10 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.034c/w (igbt) r th(j-c) = 0.051c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 900 1800 2700 4500 3600 v cc = 600v emitter current, i e , (amperes) reverse recovery, i rr , t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 v cc = 600v v ge = 15v r g = 0.52w t j = 25c inductive load v cc = 400v i c = 600a 10 3 v cc = 600v v ge = 15v r g = 0.52w t j = 125c inductive load collector current, i c , (amperes) emitter current, i e , (amperes) switching loss, (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 3 switching loss vs. collector current (typical) i rr t rr v cc = 600v v ge = 15v i c = 600a t j = 125c inductive load gate resistance, r g , (w) switching loss, (mj/pulse) 10 3 06 8 4 2 10 2 10 1 10 switching loss vs. gate resistance (typical) e on e off e rr e on e off e rr
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